RM6N800LD-T

Номер на частта: RM6N800LD-T

Производител: Rectron

Категории: MOSFET

RoHS

Технически данни: RM6N800LD-T

описание: MOSFET D-PAK MOSFET

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Спецификации

Производител: Rectron

Категории: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TO-252-3

Packaging: Reel

Pd - Power Dissipation: 98 W

Qg - Gate Charge: 24 nC

Rds On - Drain-Source Resistance: 900 mOhms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 3 V

Категория на продуктите

Последни ревюта

Напиши своя собствена Reivew

Teşekkürler

Ashir Hussain

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Shipping a little 1 weeks, normal packing, the procedure is complete.

dennis kraft

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Kathrin Leibfritz

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

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Rectron

Rectron

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Хората гледат RM6N800LD-T след това са закупени

Rectron

Rectron

Rectron

Rectron

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RM6N800LD-T

Спецификации

Категория на продуктите

Последни ревюта

Също може да харесате

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RM6N800LD-T Новини

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