Номер на частта IGLD60R190D1AUMA1 Производител Infineon Technologies Категории Bipolar Transistors - BJT RoHS Технически данни IGLD60R190D1AUMA1 описание Bipolar Transistors - BJT GAN HV
Производител Infineon Technologies Категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 600 V Configuration Single Maximum DC Collector Current 23 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case LSON-8 Packaging Cut Tape, Reel Pd - Power Dissipation 62.5 W Transistor Polarity NPN