Номер на частта VT6Z1T2R Производител ROHM Semiconductor Категории Bipolar Transistors - BJT RoHS Технически данни VT6Z1T2R описание Bipolar Transistors - BJT NPN/PNP
Производител ROHM Semiconductor Категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 20 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 120 mV Configuration Dual Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 350 MHz, 400 MHz Maximum DC Collector Current 400 mA, - 400 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Series VT6Z1 Transistor Polarity NPN, PNP