Номер на частта VT6T11T2R Производител ROHM Semiconductor Категории Bipolar Transistors - BJT RoHS Технически данни VT6T11T2R описание Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
Производител ROHM Semiconductor Категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 20 V Collector- Emitter Voltage VCEO Max - 20 V Collector-Emitter Saturation Voltage - 120 mV Configuration Dual Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 350 MHz Maximum DC Collector Current - 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Transistor Polarity PNP