Номер на частта IGB30N60T Производител Infineon Technologies Категории IGBT Transistors RoHS Технически данни IGB30N60T описание IGBT Transistors LOW LOSS IGBT TECH 600V 30A
Производител Infineon Technologies Категории IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.95 V Configuration Single Continuous Collector Current at 25 C 60 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 187 W Series TRENCHSTOP IGBT Technology SI