Номер на частта IGP40N65F5XKSA1 Производител Infineon Technologies Категории IGBT Transistors RoHS Технически данни IGP40N65F5XKSA1 описание IGBT Transistors IGBT PRODUCTS
Производител Infineon Technologies Категории IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.9 V Configuration Single Continuous Collector Current at 25 C 74 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 250 W Series Trenchstop IGBT5 Technology SI