Номер на частта IGP10N60TXKSA1 Производител Infineon Technologies Категории IGBT Transistors RoHS Технически данни IGP10N60TXKSA1 описание IGBT Transistors LOW LOSS IGBT TECH 600V 10A
Производител Infineon Technologies Категории IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 24 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 110 W Series Trenchstop IGBT3 Technology SI