Номер на частта IGD01N120H2 Производител Infineon Technologies Категории IGBT Transistors RoHS Технически данни IGD01N120H2 описание IGBT Transistors HIGH SPEED 2 TECH 1200V 1A
Производител Infineon Technologies Категории IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Configuration Single Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Series IGD01N120 Technology SI