Номер на частта IGB50N65H5ATMA1 Производител Infineon Technologies Категории IGBT Transistors RoHS Технически данни IGB50N65H5ATMA1 описание IGBT Transistors IGBT PRODUCTS
Производител Infineon Technologies Категории IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 80 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, Reel Pd - Power Dissipation 270 W Series Trenchstop IGBT5 Technology SI