Номер на частта RQ1E050RPTR Производител ROHM Semiconductor Категории MOSFET RoHS Технически данни RQ1E050RPTR описание MOSFET RECOMMENDED ALT 755-RF4E075ATTCR
Производител ROHM Semiconductor Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 120 nC Rds On - Drain-Source Resistance 31 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V