Номер на частта FQB11P06TM Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQB11P06TM описание MOSFET 60V P-Channel QFET
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11.4 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.13 W Qg - Gate Charge 17 nC Rds On - Drain-Source Resistance 140 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V