Номер на частта FQA7N80C-F109 Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQA7N80C-F109 описание MOSFET 800V N-Ch Q-FET advance C-Series
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 198 W Qg - Gate Charge 35 nC Rds On - Drain-Source Resistance 1.9 Ohms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V