Номер на частта SQ2303ES-T1_GE3 Производител Vishay Semiconductors Категории MOSFET RoHS Технически данни SQ2303ES-T1_GE3 описание MOSFET P-Channel 30V AEC-Q101 Qualified
Производител Vishay Semiconductors Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.9 W Qg - Gate Charge 4.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 170 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 2.5 V