Номер на частта FQA8N100C Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQA8N100C описание MOSFET 1000V N-Channe MOSFET
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 225 W Qg - Gate Charge 70 nC Rds On - Drain-Source Resistance 1.45 Ohms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1 kV Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V