Номер на частта RQ3E100GNTB Производител ROHM Semiconductor Категории MOSFET RoHS Технически данни RQ3E100GNTB описание MOSFET 4.5V Drive Nch MOSFET
Производител ROHM Semiconductor Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 7.9 nC Rds On - Drain-Source Resistance 11.7 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V