Номер на частта SQ3426AEEV-T1_GE3 Производител Vishay / Siliconix Категории MOSFET RoHS Технически данни SQ3426AEEV-T1_GE3 описание MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
Производител Vishay / Siliconix Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 5 W Qg - Gate Charge 11.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 32 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V