Номер на частта RQ3G150GNTB Производител ROHM Semiconductor Категории MOSFET RoHS Технически данни RQ3G150GNTB описание MOSFET Nch 40V 30Aw Si MOSFET
Производител ROHM Semiconductor Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 20 W Qg - Gate Charge 24.1 nC Rds On - Drain-Source Resistance 5.1 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V