Номер на частта SQ3985EV-T1_GE3 Производител Vishay / Siliconix Категории MOSFET RoHS Технически данни SQ3985EV-T1_GE3 описание MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified
Производител Vishay / Siliconix Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 3.9 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSOP-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3 W Qg - Gate Charge 3.1 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 130 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1.5 V