Номер на частта FQA13N50C-F109 Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQA13N50C-F109 описание MOSFET 500V CFET
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 13.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 218 W Qg - Gate Charge 56 nC Rds On - Drain-Source Resistance 480 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V