Номер на частта FQA11N90C-F109 Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQA11N90C-F109 описание MOSFET 900V N-Ch Q-FET advance C-Series
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 300 W Qg - Gate Charge 80 nC Rds On - Drain-Source Resistance 1.4 Ohms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 900 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V