Номер на частта SQ2361AEES-T1_GE3 Производител Vishay / Siliconix Категории MOSFET RoHS Технически данни SQ2361AEES-T1_GE3 описание MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified
Производител Vishay / Siliconix Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2.8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 10 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 170 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V