Номер на частта SQ2309ES-T1_BE3 Производител Vishay / Siliconix Категории MOSFET RoHS Технически данни SQ2309ES-T1_BE3 описание MOSFET P-CHANNEL 60V (D-S)
Производител Vishay / Siliconix Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1.7 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 5.5 nC Rds On - Drain-Source Resistance 335 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V