Номер на частта FQAF11N90C Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQAF11N90C описание MOSFET N-CH/900V/7A/A.QFET
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7.2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PF-3 Packaging Tube Pd - Power Dissipation 120 W Qg - Gate Charge 80 nC Rds On - Drain-Source Resistance 1.1 Ohms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 900 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V