Номер на частта FQB19N20CTM Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQB19N20CTM описание MOSFET 200V N-Channel Adv Q-FET C-Series
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 19 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 3.13 W Qg - Gate Charge 53 nC Rds On - Drain-Source Resistance 170 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V