Номер на частта FQA19N60 Производител onsemi / Fairchild Категории MOSFET RoHS Технически данни FQA19N60 описание MOSFET 600V N-CH QFET
Производител onsemi / Fairchild Категории MOSFET Channel Mode Enhancement Id - Continuous Drain Current 18.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 300 W Qg - Gate Charge 70 nC Rds On - Drain-Source Resistance 380 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V